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MOSFET modeling for analog circuit CAD: problems and prospects
1994
IEEE Journal of Solid-State Circuits
The requirements for good MOSFET modeling are discussed, as they apply to usage in analog and mixed analogiligitsl design. A set of benchmark tests that can be easily performed by the reader are given, and it is argued that most CAD models today cannot pass all the tests, even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of
doi:10.1109/4.278342
fatcat:jigfeaw5brfd7gufa2iizl6eee