MOSFET modeling for analog circuit CAD: problems and prospects

Y.P. Tsividis, K. Suyama
1994 IEEE Journal of Solid-State Circuits  
The requirements for good MOSFET modeling are discussed, as they apply to usage in analog and mixed analogiligitsl design. A set of benchmark tests that can be easily performed by the reader are given, and it is argued that most CAD models today cannot pass all the tests, even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of
more » ... el development and usage is considered, and it is argued that some of the factors responsible for the problems encountered in the modeling effort are of a nontechnical nature.
doi:10.1109/4.278342 fatcat:jigfeaw5brfd7gufa2iizl6eee