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The Novel Analytical Probabilistic Model of Random Variation in the MOSFET's High Frequency Performance
2012
Modelling, Identification and Control / 770: Advances in Computer Science and Engineering
unpublished
In this research, the probabilistic model of the random variations in nanoscale MOSFET's high frequency performance defined in term of variation in gate capacitance, has been proposed. Both random dopant fluctuation and process variation effects which are the major causes of the MOSFET's high frequency characteristic variations have been taken into account. The nanoscale MOSFET equation has been used as the mathematical basis instead of the conventional square law. The proposed model has been
doi:10.2316/p.2012.769-006
fatcat:lazrgrg63rcytfou4mimo3l74m