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A significant enhancement in the 300 K, cw photoluminescence ͑PL͒ from Er-doped Al 0.3 Ga 0.7 As native oxide films is achieved by incorporating the Er after ͑relative to before͒ wet thermal oxidation of the AlGaAs. Postoxidation Er ion implantation ͑10 15 cm −2 and 300 keV͒ prevents the formation of nonradiative ErAs complexes, leading to a relatively long 1.53 m fluorescence lifetime = 6.1 ms ͑an approximately seven times improvement͒ with approximately three times enhancement in the PLdoi:10.1063/1.2802560 fatcat:ir5sjsytnbgvbgrkl3lfijtfx4