Enhanced 1.53μm photoluminescence from Er-doped AlGaAs wet thermal native oxides by postoxidation implantation

M. Huang, D. C. Hall
2007 Applied Physics Letters  
A significant enhancement in the 300 K, cw photoluminescence ͑PL͒ from Er-doped Al 0.3 Ga 0.7 As native oxide films is achieved by incorporating the Er after ͑relative to before͒ wet thermal oxidation of the AlGaAs. Postoxidation Er ion implantation ͑10 15 cm −2 and 300 keV͒ prevents the formation of nonradiative ErAs complexes, leading to a relatively long 1.53 m fluorescence lifetime = 6.1 ms ͑an approximately seven times improvement͒ with approximately three times enhancement in the PL
more » ... ent in the PL intensity. The data suggest that Er-doped AlGaAs native oxides formed using postoxidation implantation may be a viable active media for monolithic optoelectronic integration of waveguide amplifiers on GaAs substrates.
doi:10.1063/1.2802560 fatcat:ir5sjsytnbgvbgrkl3lfijtfx4