High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection

Khalid Yahiya
2008 Technology   unpublished
In the present work , PIN photodetector has been fabricated by vacuum evaporation technique, Al was evaporated on top side of an intrinsic-type silicon and In was evaporated on down side and doped for each sides of an intrinsic silicon with thermal diffusion technique using a furnace system, in this method PIN photodetector is made. The optoelectronic and electrical properties of photodetector were studied ,PIN has spectral responsivity in visible and near infrared region and has peak
more » ... ty at wavelength 900nm ,I-V characteristic under dark condition the ideality factor is 3.2 and built-in-potential was determined by extrapolation of the curve (1/C 3) to a point 1/C 3 =0 equal 0.8v. a high speed response for the photodetector was determined , it is equal less than 2.35nS.
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