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Physically Unclonable Function using CMOS Breakdown Position
2017
Zenodo
© 2017 IEEE. A novel physically unclonable function (PUF) utilizing the intrinsic randomness of oxide breakdown (BD) positions in CMOS transistors is presented. The advantages of this approach are studied and validated by measurements on test-chips fabricated in a commercial 40nm CMOS process. Experiments show that the required soft BDs can be reliably generated in a sufficiently short period. The randomness of the utilized mechanism shows excellent properties, required for PUF applications: An
doi:10.5281/zenodo.2643385
fatcat:vv5toaz23ze7xcuabsihounnfa