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Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor
2007
Nanotechnology
We demonstrate the operation of a radio-frequency single-electron transistor (RF-SET) using single-wall carbon nanotubes (SWNTs). The device is embedded in a resonant tank circuit and operates in reflection mode at temperatures as high as 5 K. Both frequency domain and time domain results are presented. With a gate modulation frequency of 1 MHz, a charge sensitivity of ∼4.78 × 10 −4 e/Hz −1/2 is obtained, which is limited by the large parasitic capacitance between the gate and the source/drain
doi:10.1088/0957-4484/18/44/445203
fatcat:jqkwuwnyv5a7picayuacxk6gpi