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Defect engineering as a versatile route to estimate various scattering mechanisms in monolayer graphene on solid substrates
2015
Nanoscale
S1.0 Raman G and 2D peak positions of graphene prepared in polar and non polar solvents S2.0 Effect of sonication on defect induced Raman D band in graphene exfoliated in non-polar and polar environment S3.0 Gate capacitance measurement on graphene devices S3.1 Determination of carrier mobility: Relevance of capacitance measurement: S4.0 Raman spectra and electrical characterization of g-toluene, g-acetone and g-DMF S5.0 Schematic of the scanning tunneling microscopy on graphene based devices
doi:10.1039/c5nr04293c
pmid:26372472
fatcat:pcklcdi3uvgixlia6fxjytiu7u