Defect engineering as a versatile route to estimate various scattering mechanisms in monolayer graphene on solid substrates

Pawan Kumar Srivastava, Subhasis Ghosh
2015 Nanoscale  
S1.0 Raman G and 2D peak positions of graphene prepared in polar and non polar solvents S2.0 Effect of sonication on defect induced Raman D band in graphene exfoliated in non-polar and polar environment S3.0 Gate capacitance measurement on graphene devices S3.1 Determination of carrier mobility: Relevance of capacitance measurement: S4.0 Raman spectra and electrical characterization of g-toluene, g-acetone and g-DMF S5.0 Schematic of the scanning tunneling microscopy on graphene based devices
more » ... ene based devices S6.0 Raman D peak of graphene layers exfoliated in non-polar solvents S7.0 Infrared spectroscopic measurement S7.1 Infrared spectra of toluene and g-toluene S7.2 Infrared spectra of PC and g-PC S8.0 References Electronic Supplementary Material (ESI) for Nanoscale. This journal is
doi:10.1039/c5nr04293c pmid:26372472 fatcat:pcklcdi3uvgixlia6fxjytiu7u