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Study of local stress induced by circuit operation heating in 3D IC
回路動作の発熱によって三次元集積回路内に生成される局所応力の影響に関する研究
2015
MES
回路動作の発熱によって三次元集積回路内に生成される局所応力の影響に関する研究
A three-dimensional stacked IC (3D IC) shows considerable promise as method to enhance the performance of IC. A 3D IC consists of several materials such as Si substrate, metal of through Si via (TSV), metal microbump, organic adhesive, and so on. These elements, especially metal microbumps and organic adhesives generate coefficient of thermal expansion (CTE) mismatch. On the other hands, circuits generate heat in Si substrate during operation. Both the CTE mismatch and heat generation induce
doi:10.11486/mes.25.0_355
fatcat:lor6u3xqvbc2dlcfyx7jdz5lli