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Design of a Schottky Metal-Brim Structure to Optimize 180–220 GHz Broadband Frequency Doubler MMIC
2020
Electronics
The present work proposes a 180–225 GHz broadband frequency doubler monolithic microwave integrated circuit (MMIC) based on a novel Schottky barrier diode (SBD) terminal structure denoted as a Schottky metal-brim (SMB). Compared with an MMIC adopting the conventional SBD terminal structure, preliminary measurements show that the maximum output power of the MMIC adopting the SMB structure increases from 0.216 mW at 206 GHz to 0.914 mW at 208 GHz. Analysis of the nonlinear current–voltage and
doi:10.3390/electronics9050715
fatcat:l67fk7mzsfch7ft2urxm6kdzby