No. soig9636 Beamline(s): X17B1 Introduction: The compressional behavior of a new dense form of silicon nitride with the cubic spinel structure is studied be energy dispersive X-ray diffraction, following in situ synthesis from the low pressure form by laser heating in the diamond anvil cell. The unit cell dimension and the ambient temperature bulk modulus and its pressure derivative are determined to be V 0 = 8.29(3) Å 3 /atom, K 0 = 308(5) GPa, for K' 0 = 4, in excellent agreement with

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... ical calculations. Dense nitride structures of Group III and Group IV elements (Al, Si, Ga) are well known technological materials, with high mechanical strength and hardness and useful semiconducting properties