Electrical and optical properties of a PtSn4 single crystal

V V Marchenkov, A N Domozhirova, A A Semiannikova, A A Makhnev, E I Shreder, S V Naumov, V V Chistyakov, E I Patrakov, Yu A Perevozchikova, E B Marchenkova, J C A Huang, M Eisterer
2019 Journal of Physics, Conference Series  
A topological semimetal PtSn 4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ~ 0.5 µOhm·cm. The temperature dependence of the electrical
more » ... f the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ~ 6.8·10 21 cm -3 and mobility of ~ 1950 cm 2 /V·s at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn 4 have features characteristic of "bad" metals.
doi:10.1088/1742-6596/1199/1/012037 fatcat:xrzautc42ffqlc3b7edqiw5apy