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GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
2008
Applied Physics Letters
Preserved Fulltext
Mid-IR ͑ Ϸ 3 -3.5 m͒ light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T =80 K.
doi:10.1063/1.2974795
fatcat:7fn2jkc6fvdonlitvc66hdhpim