A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is application/pdf.
TEM Characterization of Single Crystal Silicon Film on Glass Substrate
2005
Microscopy and Microanalysis
Preserved Fulltext
Recently a new process was developed to obtain single crystal silicon film on glass substrate (SOG) at Corning Inc. [1]. The process not only allows the formation of a thin single crystal silicon film on the glass substrate, but also creates a silica interface layer and a barrier layer in the glass, which is permanently free of any mobile ions. At various stages of the above project, cross-sectional TEM samples were prepared to characterize the chemistry and the crystallinity properties of the
doi:10.1017/s1431927605501089
fatcat:duy5cs2z5naalhvbtpumcuk5ti