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Using density functional theory calculations with van der Waals (vdW) corrections, we investigate how the interlayer orientation affects the electronic properties of arsenene/graphene heterostructures. We show that the vertical vdW interaction has a greater impact on the buckled structure of arsenene than the planar structure of graphene. It is demonstrated that the orientation of the heterostructures can induce a different band gap in arsenene, while not significantly altering the bindingdoi:10.7567/1347-4065/aaf69b fatcat:shndljqtwzbe7mzfhv42ef4mvy