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Zinc oxide lms were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and uences 10 16 and 2 × 10 16 cm −2 . As-grown and irradiated samples were investigated by X-ray diraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.doi:10.12693/aphyspola.124.891 fatcat:b5l6rf7iiza6vhxnmeawpasp7i