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Growth of highly doped p‐type ZnTe films by pulsed laser ablation in molecular nitrogen
Applied Physics Letters
is DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best available original document. ABSTRACT Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) substrates by pulsed-laser ablation (PLA) of a stoichiometric ZnTe target in a high-purity N2 ambient without the use o any assisting (DC or AC) plasma source. Free hole concentrations in the mid-1019 cm-3 to >IO& cm-3 range were obtained for a range of nitrogendoi:10.1063/1.114453 fatcat:33a2owxqiffr7leebfwbk7gura