Positive gate bias stress instability of carbon nanotube thin film transistors Appl. Phys. Lett. 101, 053504 (2012) Effect of the electrode materials on the resistive switching of Ti4O7 Appl. Phys. Lett. 101, 053502 (2012) Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layerdeposited Al2O3 protective layer Appl. Phys. Lett. 101, 051605 (2012) ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance

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... igh-power devices Appl. Phys. Lett. 101, 052108 (2012) An exactly solvable model for the graphene transistor in the quantum capacitance limit We examine the mobility reduction measured in hafnium-based dielectrics in n-and p-MOSFETs by means of extensive comparison between accurate multi-subband Monte Carlo simulations and experimental data for reasonably mature process technologies. We have considered scattering with remote (soft-optical) phonons and remote Coulomb interaction with single layers and dipole charges. A careful examination of model assumptions and limitations leads us to the conclusion that soft optical phonon scattering cannot quantitatively explain by itself the experimental mobility reduction reported by several groups for neither the electron nor the hole inversion layers. Experimental data can be reproduced only assuming consistently large concentrations of Coulomb scattering centers in the gate stack. However, the corresponding charge or dipole density would result in a large threshold voltage shift not observed in the experiments. We thus conclude that the main mechanisms responsible for the mobility reduction in MOSFETs featuring Hafnium-based high-j dielectric have not been completely identified yet. Additional physical mechanisms that could reconcile simulations with experimental results are suggested and critically discussed. V C 2012 American Institute of Physics. [http://dx.