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Study Of Two Writing Schemes For A Magnetic Tunnel Junction Based On Spin Orbit Torque
2013
Zenodo
MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. While a growing interest is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for a universal memory, its reliability is dramatically decreased because of the common writing/reading path. Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach revitalizes the hope of an ideal MRAM. It can overcome the
doi:10.5281/zenodo.1086682
fatcat:jex2fefchjedbpcxukp2nfisuq