Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates

Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong
2018 Wuli xuebao  
Finally, an alternate model with 5 min NH3/H2 mixed gas followed by 1 min H2 and then 4 min mixed gas of thermal treatment process is used, the surface morphology of HEMT grown on GaN substrate shows highly uniform atomically steps and the root-mean-square value is 0.126 nm for 2 µm × 2 µm scan area; the HEMT 2DEG mobility 2113 cm 2 /V•s grown on GaN substrate shows good electric properties, the residual impurities of C and O in the interfacial region between GaN epilayer and GaN substrates are below 1 × 10 17 cm −3 , showing clean interfacial.
doi:10.7498/aps.67.20172581 fatcat:hjgjucgir5gkbaqlej7bmzmmry