Thermo-mechanical simulations of SiC power modules with single and double sided cooling

Klas Brinkfeldt, Michael Edwards, Jonas Ottosson, Klaus Neumaier, Olaf Zschieschang, Alexander Otto, Eberhard Kaulfersch, Dag Andersson
2015 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems  
Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were
more » ... emperatures were 141°C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 3%0 maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 3%0 increase in creep strain per cycle. 978-1-4799-9950-7/15/$31.00 ©2015 IEEE -1/7-
doi:10.1109/eurosime.2015.7103136 fatcat:b5oesmbbabbvzagm3usranfm3e