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METALORGANIC CHEMICAL VAPOR DEPOSITION : EXAMPLES OF THE INFLUENCE OF PRECURSOR STRUCTURE ON FILM PROPERTIES
Journal de Physique IV : Proceedings
The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surface spectroscopy studies reveal the critical role of hydrogen-arsenic bonds in reducing carbon levels.doi:10.1051/jp4:1991230 fatcat:lyive6l5w5esxnpc5prmitb6fi