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A high efficiency 10W MMIC PA for K-b and satellite communications
International journal of microwave and wireless technologies
This paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of suchdoi:10.1017/s1759078721000398 fatcat:fz35mcc2nzc6xmtwbuzriizwju