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The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m 2 ·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/ nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirmdoi:10.1021/acsami.9b13869.s001 fatcat:gupayqcvgjdlppr7qorrsb4naa