Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices

S. Stanković, R. Jones, J. Heck, M. Sysak, D. Van Thourhout, G. Roelkens
2011 Electrochemical and solid-state letters  
Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows
more » ... The process shows good robustness and bonding strength, with a break-down shear stress of 2MPa. The process can be scaled-up to a multiple die-to-wafer bonding procedure.
doi:10.1149/1.3592267 fatcat:ro2uz5etkbdhpncdio75edt7du