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Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process showsdoi:10.1149/1.3592267 fatcat:ro2uz5etkbdhpncdio75edt7du