The bandgap of ZnSnN2 with a disordered-wurtzite structure

Fumio Kawamura, Naoomi Yamada, Xiang Cao, Motoharu Imai, Takashi Taniguchi
2019 Japanese Journal of Applied Physics  
The metathesis reaction between SnF 4 , ZnF 2 , and NaN 3 under high pressure enabled the synthesis of ZnSnN 2 crystals with a Zn/(Zn + Sn) ratio of 0.50. The crystal structure, optical bandgap, and carrier density of these stoichiometric ZnSnN 2 crystals were investigated. X-ray diffraction profiles of the obtained powders coincided with those of a disordered wurtzite phase, regardless of the synthesis temperature and pressure. The electrical properties of the ZnSnN 2 powders with
more » ... c metal compositions were studied after sintering under high pressure and temperature. The disordered wurtzite phase exhibited a bandgap of E g = 0.7-1.2 eV, in reasonable agreement with theoretical predictions.
doi:10.7567/1347-4065/ab0ace fatcat:eeaswtrwgzb5zllv273bh4jrza