A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
Journal of the Society of Materials Science Japan
Recently, BaSnO 3 is attracting great attention as one of the promising oxide semiconductors with large bandgap (3.1 eV) and high mobility. The lattice constant and the band gap of this material can be tuned by changing the A site ion to Sr and Ca that should be an advantage if it is stacked to other oxide films with perovskite structure. In this paper, the growth and the characterization of (Ba,La)SnO 3 thin films on (111) SrTiO 3 substrate by pulsed laser deposition method are described. Thedoi:10.2472/jsms.65.638 fatcat:x44hv32hjrcwba6jtglzqqgmaq