A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf.
Robust Low Power 12T SRAM Cell Design based Full Adder using 120nm,90nm,65nm and 45nm Technologies
2018
International Journal for Research in Applied Science and Engineering Technology
Preserved Fulltext
The plan of different standard SRAM topologies with various technologies has been composed and tested for power dissipation as for the different technologies. For this thought, distinct topologies viz. 6T, 7T, 8T, 9T, 10T and 12T SRAM cells have been taken into consideration. These cells are designed using 120nm, 90nm, 65nm and 45nm technologies. The point by point investigation about these cells functionality and their characteristic behaviour with the connected parameter of supply voltage is
doi:10.22214/ijraset.2018.4060
fatcat:u4hq2een3bea5dfggxsjakf5qy