We studied experimentally: (i) the ways to fabricate metal-n + -Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and conditions; (iii) their evolution at heating and under 60 Co γ-radiation. Some versions of technique to form palladium, titanium, gold barrier layers using thermal and magnetron sputtering, as well as

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... rmionic synthesis, are discussed. We investigated the structure, as well as phase and elemental composition, of both the barrier layers in contact system and barrier layer-semiconductor interface as a function of the formation techniques and conditions, and their evolution under heating and 60 Co γ-radiation. For technological processes of contact system and mesa formation a simulation was performed to determine what contact systems are promising for use in manufacturing technology of silicon IMPATT and pick-off diodes for the millimeter wavelength range. Some conditions have been found that are necessary for production of high-performance contact systems. The heat and radiation tolerance ranges for barrier structures were considered. It was shown that the Si-Ti-TiB 2 -Au contact systems are best suited for production of silicon IMPATT and pick-off diode structures intended for the millimeter wavelength range.