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The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy
[report]
2009
unpublished
Al x Ga 1-x N layers of varying composition (0.5 < x Al < 1.0) grown in the digitallyalloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x Al < 0.75), a compositional
doi:10.21236/ada513084
fatcat:6c6ssva2vzakrkgzviesqjjeba