The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy [report]

Michael E. Hawkridge, Z. Liliental-Weber, Hee J. Kim, Suk Choi, Dongwon Yoo, Jae-Hyun Ryou, Russell D. Dupuis
2009 unpublished
Al x Ga 1-x N layers of varying composition (0.5 < x Al < 1.0) grown in the digitallyalloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x Al < 0.75), a compositional
more » ... a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.
doi:10.21236/ada513084 fatcat:6c6ssva2vzakrkgzviesqjjeba