The properties of AlGaN epi layer grown by HVPE
HVPE에 의해 성장된 AlGaN epi layer의 특성

Se-Gyo Jung, Hun-Soo Jeon, Gang-Seok Lee, Seon-Min Bae, Wi-Il Yun, Kyoung-Hwa Kim, Sam-Nyung Yi, Min Yang, Hyung-Soo Ahn, Suck-Whan Kim, Young-Moon Yu, Seong-Hak Cheon (+1 others)
2012 Journal of the Korean Crystal Growth and Crystal Technology  
The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template
more » ... re on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and NH 3 gas were flowed over the mixed-source and the carrier gas was N 2 . The temperature of source zone and growth zone was stabled at 900 and 1090 o C, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement. Key words Hydride vapor phase epitaxy (HVPE), AlGaN, Light emitting diode (LED), x-Ray diffraction (XRD), Electro luminescence (EL), Double heterostructure (DH) o C로 안정화하였다. 성장 후 샘 플은 x-ray diffraction(XRD)과 electro luminescence(EL) 측정을 하였다. †
doi:10.6111/jkcgct.2012.22.1.011 fatcat:snzwu4ltlvfjjp7fxboeutia24