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A Study on the ZnO Thin Film Deposited by RF Sputtering Method as an Electron Transport Layer in Quantum Dot Light-Emitting Diodes
Korean Journal of Metals and Materials
We report a highly efficient quantum dot light emitting diode (QLEDs) with a radio frequency (RF) sputtered ZnO thin film as an electron transport layer (ETL) instead of the conventional ZnO nanoparticles (NPs) by solution process. ZnO NPs have been used as a key material to improve the performance of QLEDs, but the charge imbalance in ZnO NPs resulting from fast electron injection, and their limited uniformity are significant disadvantages. In this study, ZnO layers were deposited by RFdoi:10.3365/kjmm.2021.59.10.718 fatcat:svt4kjmzhbhqlmy667byia34sy