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Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method
2013
Journal of Applied Physics
In this paper we study the surface passivation properties of thermally oxidized silicon wafers with controlled surface band bending, using a new characterization technique combining calibrated photoluminescence imaging with the application of an external voltage over the rear side passivation layer. Various aspects of the technique and possible errors in the determination of the effective surface recombination velocity are discussed, including lateral carrier diffusion, leakage currents and
doi:10.1063/1.4827417
fatcat:ewnncv4n45ggle6degbkamlaci