SiGe BiCMOS Technology with 3.0 ps Gate Delay

H. Rucker, B. Heinemann, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak (+17 others)
2007 2007 IEEE International Electron Devices Meeting  
A : A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e − for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90 Sr source show a time resolution of the order of 50
more » ... of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. K : Particle tracking detectors (Solid-state detectors); Solid state detectors; Instrumentation and methods for time-of-flight (TOF) spectroscopy; Pixelated detectors and associated VLSI electronics A X P : 1908.09709
doi:10.1109/iedm.2007.4419028 fatcat:tiaa4u4tsvhlricayxupdzceay