The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputtering

M F Cerqueira, T Monteiro, M V Stepikhova, M Losurdo, M J Soares, Isabel Gomes
2004 Nanotechnology  
In this contribution we present the Visible and near IR photoluminescence (PL) analysis of Er doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. Efficient photoluminescence was observed in these structures in both visible and 1.54µm wavelength regions. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 µm that has been studied on the series of specially prepared samples with the different
more » ... ith the different crystallinity, i.e. percentage and sizes of Si nanocrystals. The mechanism involved in the visible photoluminescence of highly a crystalline nc-Si:H consisting of about 7 nm silicon nanocrystals embedded in an amorphous matrix is discussed. Introduction Semiconductor nano-structures with < 10nm typical size, are of considerable current interest because of the new physics involved and potential device applications. Among them Er doped nc-Si samples are well known to be suitable for optoelectronic applications mainly in the mid infrared region, where the emission from the first excited state to the ground state of Er 3+ ion is observed near 1.54 m [1,2 and references therein]. In this contribution we show that Er-doped nc-Si:H thin films emitting at room temperature in the visible and IR range can be deposited by the reactive magnetron sputtering method. We discuss the role of nanocrystalline fraction in films on their luminescence efficiency at 1.54 µm and report for the first time on the visible Create PDF files without this message by purchasing novaPDF printer (
doi:10.1088/0957-4484/15/7/015 fatcat:i5ft6i7ndjchnosdxogj7vbwcy