There have been investigated reactive properties of silicon avalanche photodiodes (MAPD-Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U for = U inv

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... the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at U for = 1,0 V (f=500 kHz). There has been calculated difference in phase  appearing between current and voltage and it is shown that at U for =0 V the  = 80 o and passes through the zero at U for = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.