The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes

E.A. Jafarova, Z.Y. Sadygov, A.A. Dovlatov, L.A. Aliyeva, E.S. Tapdygov, K.A. Askerova
2017 IOSR Journal of Engineering  
There have been investigated reactive properties of silicon avalanche photodiodes (MAPD-Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U for = U inv
more » ... the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at U for = 1,0 V (f=500 kHz). There has been calculated difference in phase  appearing between current and voltage and it is shown that at U for =0 V the  = 80 o and passes through the zero at U for = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.
doi:10.9790/3021-0705016670 fatcat:q5j2kbgejbgsbdoxovowplceei