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The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes
IOSR Journal of Engineering
There have been investigated reactive properties of silicon avalanche photodiodes (MAPD-Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U for = U invdoi:10.9790/3021-0705016670 fatcat:q5j2kbgejbgsbdoxovowplceei