Effects of Interface Recombination on the Performance of SWCNT\GaAs Heterojunction Solar Cell

Khalili Khadije, Asghar Asgari, Hossein Movla, Alireza Mottaghizadeh, Hamed Azari Najafabadi
2011 Procedia Engineering  
This paper indicated a theoretical model for describing the effects of the interface recombination on the heterojunction solar cell parameters based on single wall carbon nanotube and GaAs as p-n junction. By choosing the zigzag nanotube and GaAs layer, it is shown that by increasing the interface recombination, short circuit current and open circuit voltage decrease. Depletion current, J-V characteristic and ideality factor variation in terms of interface recombination have been calculated.
doi:10.1016/j.proeng.2011.03.051 fatcat:ve2jsvwxhjfkdokpljf4ccc7ye