High frequency performance of large-grain polysilicon-on-insulator MOSFETs

Hongmei Wang, J. Singh, Sang Lam, Mansun Chan
2001 IEEE Transactions on Electron Devices  
Large-grain polysilicon-on-insulator (LPSOI) MOSFETs, formed from amorphous silicon by high-temperature metal-induced-lateral-crystallization (MILC) have been reported to operate in gigahertz range for the first time. Large dimensional ( = 240 1 2 m) LPSOI NMOSFETs and PMOSFETs display a maximum transconductance ( ) = 68 mS mm and 48 mS/mm at = 3 V, respectively. The unity short circuit current gain frequencies ( ) of NMOSFET and PMOSFET have been found to reach 3.4 GHz and 2.6 GHz at channel
more » ... ngth of 1.2 m. With channel length scaling, higher can be achieved and have been demonstrated with the measured value of 5.1 GHz for PMOSFET with a channel length of 0.7 m. The value obtained is the highest among silicon FETs fabricated on nonsingle crystal silicon substrates. Index Terms-Large-grain polysilicon-on-insulator (LGSOI), MOS-FETs, unity short circuit current gain frequency.
doi:10.1109/16.930672 fatcat:um3ccn7scjbnlcvqfv3z5l54me