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Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

Jihyun Seo, Kyoungrok Han, Taeun Youn, Hye-Eun Heo, Sanghyun Jang, Jongwook Kim, Honam Yoo, Joowon Hwang, Cheolhoon Yang, Heeyoul Lee, Byungkook Kim, Eunseok Choi (+9 others)
2013 2013 IEEE International Electron Devices Meeting  

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Our Middle-1X nm MLC NAND (M1X) flash cell is intensively characterized with respect to reliability and manufacturability. For the first time, the novel active air-gap technology is applied to alleviate the drop of channel boosting potential of program inhibition mode, BL-BL interference is reduced to our 2y nm node level by this novel integration technology. Furthermore, it also relaxes the effect of process variation like EFH (Effective Field oxide Height) on cell Vt distribution. Better
more » ... ance and retention characteristics can be obtained by p+ doped poly gate. By optimization of active air-gap profile and poly doping level, M1X nm MLC NAND flash memory has been successfully implemented with superior manufacturability and acceptable reliability. IEDM13-76 3.6.1 978-1-4799-2306-9/13/$31.00 ©2013 IEEE
doi:10.1109/iedm.2013.6724554 fatcat:o2tufkqcincqbo55pdaizlwklu
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Jihyun Seo, Kyoungrok Han, Taeun Youn, Hye-Eun Heo, Sanghyun Jang, Jongwook Kim, Honam Yoo, Joowon Hwang, Cheolhoon Yang, Heeyoul Lee, Byungkook Kim, Eunseok Choi, Keumhwan Noh, Byoungki Lee, Byungseok Lee, Heehyun Chang, Sungkye Park, Kunok Ahn, Seokkiu Lee, Jinwoong Kim, Seokhee Lee. "Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies." 2013 IEEE International Electron Devices Meeting (2013)