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EFFECTS OF ANNEALING TEMPERATURE ON THE CRYSTALLOGRAPHIC, MORPHOLOGICAL AND ELECTRICAL CHARACTERISTICS OF E-BEAM DEPOSITED Al/Eu2O3/n-Si (MOS) CAPACITORS
2020
RAP Conference Proceedings
unpublished
Rare earth oxides (REOs) play an important role in the semiconductor technology. Europium oxide (Eu2O3) is one of REOs and it has been used in many applications such as optoelectronics, telecommunications, microelectronics and optical devices. However, in this study, Eu2O3 MOS capacitors have been fabricated by using the Electron Beam Evaporation (E-Beam) technique and the effects of different annealing temperatures on them have been investigated. Before and after annealing, the
doi:10.37392/rapproc.2020.03
fatcat:yxkmppshefbgfnhtdh3lqgfpue