Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

Jingsong Huang, Jan Blochwitz-Nimoth, Martin Pfeiffer, Karl Leo
2003 Journal of Applied Physics  
We have studied the behavior of various intrinsic emission zones on the characteristics of organic light-emitting diodes with a p-doped hole-transport layer and an n-doped electron-transport layer based on our previous work ͓J.
doi:10.1063/1.1533838 fatcat:7gzqomwhyjhhfc35akdqfhstf4