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The fundamental characteristic of the quantum well heterostructures is the optical gain. In this paper, the effect of barriers (InGaAlAs and AlGaAs), claddings (InAlAs and AlGaAs) and substrates (InP and GaAs) materials on the optical gain of InGaAlAs quantum well of 6 nm width has been studied with in TE and TM polarization modes. The overall size (width) of the STIN-SCH (step index -separate confinement heterostructure) based nanoheterostructure including single quantum well along withdoi:10.1143/jjap.44.7460 fatcat:ijyd3aht5vde3dgsifdp6ukf7e