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We characterized two samples consisting of photoresist layers on silicon with square arrays of square holes by spectroscopic ellipsometry (SE) and Mueller matrix polarimetry (MMP). Hole lateral dimensions and depths were determined by fitting either SE data taken in conventional planar geometry or MMP data in general conical diffraction configurations. A method for objective determination of the optimal measurement conditions based on sensitivity and parameter correlations is presented. Whendoi:10.1051/epjap:2008089 fatcat:m6csrvwhy5cxncshptdluhdoou