A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf
.
Performance comparison of SRAM cells in 45NM technology in the presence of a memory cell control circuit
2018
International Journal of Engineering & Technology
Lowering power consumption and increasing the noise margin have become the two most important aspects to be considered in SRAM design. Additionally, a stable operation with good memory retention capability has gained greater importance in obtaining good yield at low-voltage and low-power SRAM designs, due to the fact that parameter variations play a major role in scaled technologies. In this paper, the 6T SRAM, 7T low power SRAM and 7T multi threshold low power SRAM designs are designed, to
doi:10.14419/ijet.v7i4.5.21177
fatcat:irxpfa3vczehlgwevglol6irde