Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device

Norfarariyanti Bte Parimon, Siti Suhaila Bte Mohd Yusof, Abdul Manaf Bin Hashim
2008 2008 Second Asia International Conference on Modelling & Simulation (AMS)  
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the
more » ... ble based on the length of coplanar waveguide.
doi:10.1109/ams.2008.187 dblp:conf/asiams/ParimonYH08 fatcat:he7rllosnvhb3hrepeo63iwa6i