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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
2014
Applied Physics Letters
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The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, À5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p 11 , p 12 , and p 44 of p-type 3C-SiC were obtained to be 1.5 Â 10 À11 Pa À1 , À1.4 Â 10 À11 Pa À1 , and 18.1 Â 10 À11 Pa À1 ,
doi:10.1063/1.4869151
fatcat:iwqjnehyx5cyjprkkw6a3eveyi