Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Hoang-Phuong Phan, Dzung Viet Dao, Philip Tanner, Li Wang, Nam-Trung Nguyen, Yong Zhu, Sima Dimitrijev
2014 Applied Physics Letters  
The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, À5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p 11 , p 12 , and p 44 of p-type 3C-SiC were obtained to be 1.5 Â 10 À11 Pa À1 , À1.4 Â 10 À11 Pa À1 , and 18.1 Â 10 À11 Pa À1 ,
more » ... From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors. V C 2014 AIP Publishing LLC. [http://dx.
doi:10.1063/1.4869151 fatcat:iwqjnehyx5cyjprkkw6a3eveyi