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Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in-situ laser interference during self-assembled molecularr beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interfer-ence act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage and the laser parameters. By optimizing the growth and interference conditions, regular densedoi:10.5281/zenodo.4106535 fatcat:qbr6aa5slvbobck5nst5yx5zhy