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Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
IEEE transactions on nanotechnology
The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested. Index Terms-Loading effect, pattern dependency, selective epitaxy, SiGe.doi:10.1109/tnano.2008.2009219 fatcat:xcqgv5lhfrdrvg5oiroki4sl7u