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Magnetically engineered spintronic sensors and memory
2003
Proceedings of the IEEE
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of magnetically engineered magnetic thin-film materials suitable for advanced magnetic sensors and magnetic random access memories. Magnetic sensors based on spin-valve giant magnetoresistive (GMR) sandwiches with artificial antiferromagnetic reference layers have resulted in enormous increases in the storage
doi:10.1109/jproc.2003.811807
fatcat:xbw4bzcw2bcuzogfhb4a5qelby