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Device modeling of ferroelectric memory field-effect transistor (FeMFET)
2002
IEEE Transactions on Electron Devices
A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of
doi:10.1109/ted.2002.803626
fatcat:xkjlfimegnfhvcqktj5h4ofsay