Drain current (I d ) degradation due to Fowler-Nordheim (FN) stress and V g ¼ V d stress were investigated in 0.15 mm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under V g ¼ V d stress, the damage resulting from gate-tosource tunneling current is not negligible in comparison with the damage caused by channel hot carriers. I d degradation models of pMOSFETs

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... er FN stress and V g ¼ V d stress were established. According to the I d degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.